Nitride Wide Bandgap Semiconductor Material and Electronic Devices

5a9e8d9c56a08.jpg Author Jin Cheng Zhang, Jin Feng Zhang, and Yue Hao
Isbn 9781498745123
File size 21MB
Year 2016
Pages 388
Language English
File format PDF
Category Engineering and Technology

Book Description:

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.



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